Analog non-volatile memory device using poly ferroelectric film with random polarization directions (Q119764666)
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US patent 11380708
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Analog non-volatile memory device using poly ferroelectric film with random polarization directions |
US patent 11380708 |
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Analog non-volatile memory device using poly ferroelectric film with random polarization directions (English)
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Chih-Sheng Chang (Hsinchu)
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