Semiconductor film forming method using hydrazine-based compound gas (Q121890478)
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US patent 11348794
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Semiconductor film forming method using hydrazine-based compound gas |
US patent 11348794 |
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Semiconductor film forming method using hydrazine-based compound gas (English)
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Hideo Nakamura (Yamanashi)
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Yosuke Serizawa (Yamanashi)
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Yoshikazu Ideno (Yamanashi)
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Hiroaki Ashizawa (Yamanashi)
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Takaya Shimizu (Yamanashi)
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Seishi Murakami (Yamanashi)
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