Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation (Q27447659)

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30 January 2020

title

Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation (English)

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2

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author name string

Riedl C

1

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Iwasaki T

3

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Zakharov AA

4

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Starke U

5

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language of work or name

English

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publication date

10 December 2009

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published in

Physical Review Letters

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PubMed

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volume

103

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issue

24

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page(s)

246804

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Graphene: status and prospects

30 January 2020

cites work

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Electronic confinement and coherence in patterned epitaxial graphene

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Controlling the Electronic Structure of Bilayer Graphene

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Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

21 January 2018

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Epitaxial graphene on SiC(0001) and [Formula: see text]: from surface reconstructions to carbon electronics

21 January 2018

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Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2.

21 January 2018

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Control of graphene's properties by reversible hydrogenation: evidence for graphane.

21 January 2018

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Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study

21 January 2018

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Passivation of hexagonal SiC surfaces by hydrogen termination

21 January 2018

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Synchrotron x-ray photoelectron spectroscopy study of hydrogen-terminated6H−SiC{0001}surfaces

21 January 2018

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Quasiparticle Transformation during a Metal-Insulator Transition in Graphene

21 January 2018

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10.1103/PHYSREVLETT.103.246804

21 January 2018

Identifiers

DOI

2 references

Consolidated OpenCitations Corpus – April 2017

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1 reference

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2 references

Consolidated OpenCitations Corpus – April 2017