Tunnel field-effect transistors as energy-efficient electronic switches (Q34233625)

31 July 2017

title

Tunnel field-effect transistors as energy-efficient electronic switches (English)

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31 July 2017

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field-effect transistor

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2

Heike Riel

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31 July 2017

Adrian M Ionescu

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31 July 2017

language of work or name

English

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publication date

16 November 2011

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31 July 2017

number of pages

9

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inferred from page(s)

published in

Nature

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31 July 2017

volume

479

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31 July 2017

issue

7373

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31 July 2017

page(s)

329-337

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Trap-assisted tunneling in Si-InAs nanowire heterojunction tunnel diodes.

31 July 2017

cites work

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12 December 2020

Band-to-band tunneling in carbon nanotube field-effect transistors.

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12 December 2020

Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling.

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12 December 2020

Control of InAs nanowire growth directions on Si.

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12 December 2020

Use of negative capacitance to provide voltage amplification for low power nanoscale devices.

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12 December 2020

Device and Architecture Outlook for Beyond CMOS Switches

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https://api.crossref.org/works/10.1038%2FNATURE10679

7 January 2021

Low-Voltage Tunnel Transistors for Beyond CMOS Logic

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https://api.crossref.org/works/10.1038%2FNATURE10679

7 January 2021

Low-subthreshold-swing tunnel transistors

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https://api.crossref.org/works/10.1038%2FNATURE10679

7 January 2021

Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

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https://api.crossref.org/works/10.1038%2FNATURE10679

7 January 2021

Toward Nanowire Electronics

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https://api.crossref.org/works/10.1038%2FNATURE10679

7 January 2021

A Tunnel FET for $V_{DD}$ Scaling Below 0.6 V With a CMOS-Comparable Performance

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https://api.crossref.org/works/10.1038%2FNATURE10679

7 January 2021

Computational Study of the Ultimate Scaling Limits of CNT Tunneling Devices

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https://api.crossref.org/works/10.1038%2FNATURE10679

7 January 2021

Comparing Carbon Nanotube Transistors—The Ideal Choice: A Novel Tunneling Device Design

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https://api.crossref.org/works/10.1038%2FNATURE10679

7 January 2021

Giant phonon-induced conductance in scanning tunnelling spectroscopy of gate-tunable graphene

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https://api.crossref.org/works/10.1038%2FNATURE10679

7 January 2021

Ultralow-Voltage Bilayer Graphene Tunnel FET

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https://api.crossref.org/works/10.1038%2FNATURE10679

7 January 2021

Identifiers

DOI

10.1038/NATURE10679

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journals/nature/IonescuR11

31 July 2017

DBLP publication ID

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DBLP Dataset 2021-01-02

Dimensions Publication ID

28 January 2021

1048502366

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