Chlorination-methylation of the hydrogen-terminated silicon(111) surface can induce a stacking fault in the presence of etch pits (Q46359183)
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| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Chlorination-methylation of the hydrogen-terminated silicon(111) surface can induce a stacking fault in the presence of etch pits |
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Chlorination-methylation of the hydrogen-terminated silicon(111) surface can induce a stacking fault in the presence of etch pits (English)
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Nathan S Lewis
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Santiago D Solares
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Hongbin Yu
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Lauren J Webb
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James R Heath
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William A Goddard
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1 March 2006
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128
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12
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3850-3851
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Identifiers
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