Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors. (Q51165556)

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scientific article published in July 2006
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Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors.
scientific article published in July 2006

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    Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors. (English)

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