Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors. (Q51165556)
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scientific article published in July 2006
Language | Label | Description | Also known as |
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English | Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors. |
scientific article published in July 2006 |
Statements
Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors. (English)
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Silvija Gradecak
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Jie Xiang
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Fang Qian
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Yue Wu
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Hao Yan
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Douglas A Blom
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Charles M Lieber
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1 July 2006
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6
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7
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1468-1473
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Identifiers
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