High‐Quality InAs/InSb Nanowire Heterostructures Grown by Metal–Organic Vapor‐Phase Epitaxy (Q57189115)

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9 January 2020

title

High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy (English)

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9 January 2020

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1

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9 January 2020

Jakob B. Wagner

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9 January 2020

Kimberly A Dick

3

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9 January 2020

Lars Samuelson

7

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9 January 2020

Reine Wallenberg

8

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9 January 2020

Lars-Erik Wernersson

9

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9 January 2020

Knut Deppert

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author name string

Mattias Jeppsson

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9 January 2020

Henrik A Nilsson

4

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publication date

1 July 2008

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9 January 2020

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9 January 2020

volume

4

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9 January 2020

issue

7

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9 January 2020

page(s)

878-882

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Structural characteristics of GaSb∕GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition

9 January 2020

cites work

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Crossref

https://api.crossref.org/works/10.1002%2FSMLL.200700892

Surfactant-mediated epitaxy of Ge on Si(111): Beyond the surface

21 January 2018

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Crossref

https://api.crossref.org/works/10.1002%2FSMLL.200700892

21 January 2018

Identifiers

DOI

10.1002/SMLL.200700892

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9 January 2020

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