New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions (Q57554530)

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New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions
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    New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions (English)
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    A. Cerdeira
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    M. Estrada
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    R. Garcı́a
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    F.J. Garcı́a Sánchez
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    July 2001
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    45
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    7
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    1077-1080
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