Nanometre-scale electronics with III–V compound semiconductors (Q59067090)

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16 January 2020

title

Nanometre-scale electronics with III-V compound semiconductors (English)

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16 January 2020

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1

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16 January 2020

author name string

Jesús A. del Alamo

series ordinal

1

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language of work or name

English

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publication date

16 November 2011

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16 January 2020

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16 January 2020

volume

479

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16 January 2020

issue

7373

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16 January 2020

page(s)

317-323

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Integrated nanoelectronics for the future

16 January 2020

cites work

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12 December 2020

Vertical InAs Nanowire Wrap Gate Transistors withft> 7 GHz andfmax> 20 GHz

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12 December 2020

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

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12 December 2020

Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors

1 reference

12 December 2020

MBE growth of ultra-low disorder 2DEG with mobility exceeding 35×106cm2/Vs

1 reference

https://api.crossref.org/works/10.1038%2FNATURE10677

7 January 2021

Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition

1 reference

https://api.crossref.org/works/10.1038%2FNATURE10677

7 January 2021

On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors

1 reference

https://api.crossref.org/works/10.1038%2FNATURE10677

7 January 2021

Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs

1 reference

https://api.crossref.org/works/10.1038%2FNATURE10677

7 January 2021