Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon (Q62558267)
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| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon |
No description defined |
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Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon (English)
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November 2008
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517
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1
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75-79
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