InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off (Q62569946)

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InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off
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    InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off (English)
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    W. S. Wong
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    T. Sands
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    N. W. Cheung
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    M. Kneissl
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    D. P. Bour
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    P. Mei
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    L. T. Romano
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    N. M. Johnson
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    30 October 2000
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    77
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    18
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    2822-2824
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