Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells (Q62592511)
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article by K. Muraki et al published 3 August 1992 in Applied Physics Letters
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells |
article by K. Muraki et al published 3 August 1992 in Applied Physics Letters |
Statements
Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells (English)
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3 August 1992
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61
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5
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557-559
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