In situ surface passivation of III–V semiconductors in MOVPE by amorphous As and P layers (Q63790558)

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In situ surface passivation of III–V semiconductors in MOVPE by amorphous As and P layers
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    In situ surface passivation of III–V semiconductors in MOVPE by amorphous As and P layers (English)
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    K. Knorr
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    U. Resch-Esser
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    N. Esser
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    M. Zorn
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    W. Richter
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    January 1997
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    170
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    1-4
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    230-236
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