Wikidata:WikiProject Electronic Components
The ultimate goal is to store all electronic components into the Wikidata database with their features. We could then with some requests get all informations we need about one specific part or compare some parts on specific feature(s) by using filters. We also could add links to manufacturers website and manufacturers datasheet, design guides, application notes, etc. and more !!! there is lot of things to do !!!
Info You can use AutoEdit tool to add quickly label and description on WikiProject Electronic Components in many languages.
Component Types[edit]
All Component Types[edit]
List of all electronic component types should be here
- Capacitor
- Inductor
- LED Display
- LCD Display
- LASER Diode
- LED
- Optocoupler
- Photodiode
- Photoresistor
- Phototransistor
- Resistor
- Transformer
Categories[edit]
Categories Tree[edit]
4 Level max categories tree
- Optoelectronics
- Display
- LED
- Dot-Matrix
- 7-Segment
- LCD
- VFD
- LED
- LASER Diode
- LED
- Optocoupler
- Photodiode
- Photoresistor
- Phototransistor
- Display
- Passive components
- Capacitor
- Inductor
- Resistor
- Transformer
- Semiconductor
- Active
- Discrete
Manufacturers[edit]
All Manufacturers[edit]
List of all electronic components manufacturers
- Avago Technologies
- Everlight
- Fairchild Semiconductor
- Honeywell
- Isocom
- Optek Technology
- Sharp
- Toshiba Semiconductor
- Vishay
Manufacturers by component types[edit]
List of all manufacturers by component type. All component types defined in "Component Types" header should be here.
Capacitor
LED Display
LCD Display
Inductor
LASER Diode
LED
Optocoupler
- Avago Technologies
- Everlight
- Fairchild Semiconductor
- Isocom
- Optek Technology
- Sharp
- Toshiba Semiconductor
- Vishay
Photodiode
Photoresistor
Phototransistor
Resistor
Transformer
Component Elements[edit]
Status : (to define) (work in progress) (need help) (pause) (to be checked) (ok)
Element name : Manufacturer + Part number. Example : NXP HEF4011B
Element description : Short Component Description + Manufacturer + Part number. Example : Quad 2 input NAND NXP HEF4011B
Element alias : Component Class + Generic Part number (without manufacturer prefix and without package number suffix). Example : IC 4011
Each element must have at least these 4 properties to be properly identified : Manufacturer, Part number, Generic part number and Short description
***Common Template*** (to define)
- Manufacturer
- Part number
- Generic part number
- Short description
- Description
- Package
- Datasheet Link
Id | Category | Sub-Category | Element | Element alias | Symbol | Description* | Value | Unit | Temperature Condition | Condition 1 | Condition n | Comment | Manufacturer 1 | Manufacturer n |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1 | category, if any | sub-category, if any | global / sub-element | element alias, if any | feature symbol | feature description | feature value | value unit | temperature condition, if any | 1st condition | nth condition | Add here any comment | ||
2 | example : @ta=25 °C | example : If=10mA | example : Vcc=5V | yes/no | yes/no | |||||||||
n |
Capacitor (to define)
- Manufacturer
- Part number
- Generic part number
- Short description
- Description
LED Display (to define)
- Manufacturer
- Part number
- Generic part number
- Short description
LCD Display (to define)
- Manufacturer
- Part number
- Generic part number
- Short description
Inductor (to define)
- Manufacturer
- Part number
- Generic part number
- Short description
LASER Diode (to define)
- Manufacturer
- Part number
- Generic part number
- Short description
LED (pause)
- Manufacturer
- Part number
- Generic part number
- Short description
- Description
- Color
- Lenght Wave
- Power
- If typ
- If max
- Vf min
- Vf typ
- Vf max
- Angle
- Package
- Rth
Optocoupler (pause)
- Manufacturer -> ComboBox(name="Optocoupler Manufacturers") Example : Fairchild Semiconductor
- Part Number -> String Example : 4N25M
- Generic part number -> String Example : 4N25
- Short description -> String(Lenght=30) Example : Phototransistor Optocoupler
- Description -> String Example : 6-Pin General Purpose Phototransistor Optocoupler
- Input type -> Combobox(name="Optocoupler Input Types"; values="AC", "DC") Example : DC
- Output type -> ComboBox(name="Optocoupler Output Types"; values="Transistor", "Darlington", "MOSFET", "Triac", "Thyristor", "Logic Gate") Example : Transistor
- Package -> ComboBox(name=Optocoupler Packages; values="DIP6", "SMT6")
Category | Sub-category | Element | Element alias | Symbol | Description | Value | Unit | Temperature Condition | Condition 1 | Condition 2 | Condition 3 | Comment | Avago | Everlight | Fairchild Semiconductor |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Safety and Insulation rating | - | global | - | Vpr | Input to Output Test Voltage (Method A) Vpr = Viorm x 1,6 | 1360 | Vpeak | tm = 10s | Partial Discharge < 5pC | - | - | ? | ? | yes (4N25) | |
Safety and Insulation rating | - | global | - | Vpr | Input to Output Test Voltage (Method B) Vpr = Viorm x 1,875 | 1594 | Vpeak | tm = 1s | Partial Discharge < 5pC | - | - | ? | ? | yes (4N25) | |
Safety and Insulation rating | - | global | - | Viorm | Maximum Working Insulation Voltage | 850 | Vpeak | - | - | - | - | ? | ? | yes (4N25) | |
Safety and Insulation rating | - | global | - | Viotm | Highest Allowable Over-Voltage | 6000 | Vpeak | - | - | - | - | ? | ? | yes (4N25) | |
Safety and Insulation rating | - | global | - | - | External Creepage | >7 | mm | - | - | - | - | ? | ? | yes (4N25) | |
Safety and Insulation rating | - | global | - | - | External Clearance | >7 | mm | - | - | - | - | ? | ? | yes (4N25) | |
Safety and Insulation rating | - | global | - | - | External Clearance (for Option TV, 0,4" Lead Spacing) | >10 | mm | - | - | - | - | ? | ? | yes (4N25) | |
Safety and Insulation rating | - | global | - | DTI | Distance Through Insulation (Insulation Thickness) | >0.5 | mm | - | - | - | - | ? | ? | yes (4N25) | |
Safety and Insulation rating | - | global | - | Ts | Maximum Case Temperature | 175 | °C | - | - | - | Safety limit values – maximum values allowed in the event of a failure | ? | ? | yes (4N25) | |
Safety and Insulation rating | - | Emitter | Input | Is | Maximum Input Current | 350 | mA | - | - | - | Safety limit values – maximum values allowed in the event of a failure | ? | ? | yes (4N25) | |
Safety and Insulation rating | - | Detector | Ouput | Ps | Maximum Output Power | 800 | mW | - | - | - | Safety limit values – maximum values allowed in the event of a failure | ? | ? | yes (4N25) | |
Safety and Insulation rating | - | global | - | Rio | Maximum Insulation Resistance at Ts | >10^9 | ohm | Vio = 500V | - | - | Safety limit values – maximum values allowed in the event of a failure | ? | ? | yes (4N25) | |
Absolute Maximum Rating | - | global | - | Tstg | Storage Temperature (Range) | -40 to +125 | °C | - | - | - | - | ? | ? | yes (4N25) | |
Absolute Maximum Rating | - | global | - | Topr | Operating Temperature (Range) | -40 to +100 | °C | - | - | - | - | ? | ? | yes (4N25) | |
Absolute Maximum Rating | - | global | - | Tj | Junction Temperature (Range) | -40 to +125 | °C | - | - | - | - | ? | ? | yes (4N25) | |
Absolute Maximum Rating | - | global | - | Tsol | Max Lead Soldering Temperature (while 10s) | 260 | °C | t=10s | - | - | - | ? | ? | yes (4N25) | |
Absolute Maximum Rating | - | global | - | Pd | Total Device Power Dissipation @ Ta = 25 °C | 270 | mW | @ Ta = 25 °C | - | - | - | - | ? | ? | yes (4N25) |
Absolute Maximum Rating | - | global | - | Pd | Derate Above 25 °C | 2.94 | mW/°C | - | - | - | - | ? | ? | yes (4N25) | |
Absolute Maximum Rating | - | Emitter | Input | If | DC/Average Forward Input Current | 60 | mA | - | - | - | - | ? | ? | yes (4N25) | |
Absolute Maximum Rating | - | Emitter | Input | Vr | Reverse Input Voltage | 6 | V | - | - | - | - | ? | ? | yes (4N25) | |
Absolute Maximum Rating | - | Emitter | Input | If(pk) | Forward Current – Peak (300 μs, 2% Duty Cycle) | 3 | A | - | - | - | - | ? | ? | yes (4N25) | |
Absolute Maximum Rating | - | Emitter | Input | Pd | LED Power Dissipation @ Ta = 25 °C | 120 | mW | - | - | - | - | ? | ? | yes (4N25) | |
Absolute Maximum Rating | - | Emitter | Input | Pd | Derate Above 25 °C | 1.41 | mW/°C | - | - | - | - | ? | ? | yes (4N25) | |
Absolute Maximum Rating | - | Detector | Output | Vceo | Collector-to-Emitter Voltage | 30 | V | - | - | - | - | ? | ? | yes (4N25) | |
Absolute Maximum Rating | - | Detector | Output | Vcbo | Collector-to-Base Voltage | 70 | V | - | - | - | - | ? | ? | yes (4N25) | |
Absolute Maximum Rating | - | Detector | Output | Veco | Emitter-to-Collector Voltage | 7 | V | - | - | - | - | ? | ? | yes (4N25) | |
Absolute Maximum Rating | - | Detector | Output | Pd | Detector Power Dissipation @ Ta = 25 °C | 150 | mW | - | - | - | - | ? | ? | yes (4N25) | |
Absolute Maximum Rating | - | Detector | Output | Pd | Derate Above 25 °C | 1.76 | mW/°C | - | - | - | - | ? | ? | yes (4N25) | |
Electrical Characteristics | Individual Component Characteristics | Emitter | Input | Vf_typ | Input Forward Voltage (typ) | 1.18 | V | @ Ta = 25 °C | If=10mA | - | - | - | ? | ? | yes (4N25) |
Electrical Characteristics | Individual Component Characteristics | Emitter | Input | Vf_max | Input Forward Voltage (max) | 1.50 | V | @ Ta = 25 °C | If=10mA | - | - | - | ? | ? | yes (4N25) |
Electrical Characteristics | Individual Component Characteristics | Emitter | Input | Ir_typ | Reverse Leakage Current (typ) | 0.001 | µA | @ Ta = 25 °C | Vr=6.0V | - | - | - | ? | ? | yes (4N25) |
Electrical Characteristics | Individual Component Characteristics | Emitter | Input | Ir_max | Reverse Leakage Current (max) | 10 | µA | @ Ta = 25 °C | Vr=6.0V | - | - | - | ? | ? | yes (4N25) |
Electrical Characteristics | Individual Component Characteristics | Detector | Output | Bvceo_min | Collector-to-Emitter Breakdown Voltage (min) | 30 | V | @ Ta = 25 °C | Ic=1mA | If=0 | - | - | ? | ? | yes (4N25) |
Electrical Characteristics | Individual Component Characteristics | Detector | Output | Bvceo_typ | Collector-to-Emitter Breakdown Voltage (typ) | 100 | V | @ Ta = 25 °C | Ic=1mA | If=0 | - | - | ? | ? | yes (4N25) |
Electrical Characteristics | Individual Component Characteristics | Detector | Output | Bvcbo_min | Collector-to-Base Breakdown Voltage (min) | 70 | V | @ Ta = 25 °C | Ic=100µA | If=0 | - | - | ? | ? | yes (4N25) |
Electrical Characteristics | Individual Component Characteristics | Detector | Output | Bvcbo_typ | Collector-to-Base Breakdown Voltage (typ) | 120 | V | @ Ta = 25 °C | Ic=100µA | If=0 | - | - | ? | ? | yes (4N25) |
Electrical Characteristics | Individual Component Characteristics | Detector | Output | Bveco_min | Emitter-to-Collector Breakdown Voltage (min) | 7 | V | @ Ta = 25 °C | Ie=100µA | If=0 | - | - | ? | ? | yes (4N25) |
Electrical Characteristics | Individual Component Characteristics | Detector | Output | Bveco_typ | Emitter-to-Collector Breakdown Voltage (typ) | 10 | V | @ Ta = 25 °C | Ie=100µA | If=0 | - | - | ? | ? | yes (4N25) |
Electrical Characteristics | Individual Component Characteristics | Detector | Output | Iceo_typ | Collector-to-Emitter Dark Current (typ) | 1 | nA | @ Ta = 25 °C | Vce=10V | If=0 | - | - | ? | ? | yes (4N25) |
Electrical Characteristics | Individual Component Characteristics | Detector | Output | Iceo_max | Collector-to-Emitter Dark Current (max) | 50 | nA | @ Ta = 25 °C | Vce=10V | If=0 | - | - | ? | ? | yes (4N25) |
Electrical Characteristics | Individual Component Characteristics | Detector | Output | Icbo_max | Collector-to-Base Dark Current (max) | 20 | nA | @ Ta = 25 °C | Vcb=10V | - | - | - | ? | ? | yes (4N25) |
Electrical Characteristics | Individual Component Characteristics | Detector | Output | Cce_typ | Capacitance (typ) | 8 | pF | @ Ta = 25 °C | Vce=0V | f=1MHz | - | - | ? | ? | yes (4N25) |
Electrical Characteristics | Transfer Characteristics (DC) | global | - | CTR_min | Current Transfer Ratio, Collector-to-Emitter @25 °C | % | @ Ta = 25 °C | If=10mA | Vce=10V | - | - | ? | ? | yes (4N25) | |
Electrical Characteristics | Transfer Characteristics (DC) | global | - | CTR_min | Current Transfer Ratio, Collector-to-Emitter @-55 °C | % | @ Ta = -55 °C | If=10mA | Vce=10V | - | - | ? | ? | yes (4N25) | |
Electrical Characteristics | Transfer Characteristics (DC) | global | - | CTR_min | Current Transfer Ratio, Collector-to-Emitter @100 °C | % | @ Ta = 100 °C | If=10mA | Vce=10V | - | - | ? | ? | yes (4N25) | |
Electrical Characteristics | Transfer Characteristics (DC) | global | - | Vce_sat_max | Collector-to-Emitter Saturation Voltage | 0.5 | V | @ Ta = 25 °C | Ic=2mA | If=50mA | - | - | ? | ? | yes (4N25) |
Electrical Characteristics | Transfer Characteristics (AC) | global | - | Ton_typ | Non Satured Turn On Time | 2 | µs | @ Ta = 25 °C | If=10mA | Vcc=10V | Rl=100ohm | - | ? | ? | yes (4N25) |
Electrical Characteristics | Transfer Characteristics (AC) | global | - | Toff_typ | Turn Off Time | 2 | µs | @ Ta = 25 °C | If=10mA | Vcc=10V | Rl=100ohm | - | ? | ? | yes (4N25) |
Electrical Characteristics | Isolation Characteristics | global | - | Viso_min | Input-Output Isolation Voltage | 4170 | Vacrms | @ Ta = 25 °C | t=1mn | - | - | - | ? | ? | yes (4N25) |
Electrical Characteristics | Isolation Characteristics | global | - | Ciso_typ | Isolation Capacitance | 0.2 | pF | @ Ta = 25 °C | Vi-o=0V | f=1MHz | - | - | ? | ? | yes (4N25) |
Electrical Characteristics | Isolation Characteristics | global | - | Riso_min | Isolation Resistance | 10^11 | ohm | @ Ta = 25 °C | Vi-o=500VDC | - | - | - | ? | ? | yes (4N25) |
Photodiode (to define)
- Manufacturer
- Part Number
- Generic part number
- Short description
Photoresistor (to define)
- Manufacturer
- Part Number
- Generic part number
- Short description
Phototransistor (to define)
- Manufacturer
- Part Number
- Generic part number
- Short description
Resistor (to define)
- Manufacturer
- Part Number
- Generic part number
- Short description
Transformer (to define)
- Manufacturer
- Part Number
- Generic part number
- Short description